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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP70N10KUF
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP70N10KUF is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
(TO-263)
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP70N10KUF-E1-AZ
NP70N10KUF-E2-AZ
Note
Note
Pure Sn (Tin)
Tape
800 p/reel
TO-263 (MP-25ZK)
typ. 1.5 g
Note See “ TAPE INFORMATION ”
FEATURES
? Channel temperature 175 degree rating
? Super low on-state resistance
R DS(on) = 20 m Ω MAX. (V GS = 10 V, I D = 35 A)
? Low C iss : C iss = 2500 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
100
±20
±70
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±135
A
Total Power Dissipation (T A = 25 ° C)
Total Power Dissipation (T C = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
1.8
120
175
? 55 to +175
W
W
° C
° C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
22
48
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25 ° C, V DD = 50 V, R G = 25 Ω , V GS = 20 → 0 V, L = 100 μ H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.25
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18040EJ2V0DS00 (2nd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
2006
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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